MOSFETS
PACKAGE: TO-72| Part | Package | Breakdown V Min
| IGSS (pA) Max
| IDSS (nA) Max
| VGS (V) Min
| VGS (V) Max
| RDS (on) (Ohm) Max
| Comments
| Channel
|
| 2N4351 | TO-72 | 25 | 10 | 10 | 300 | High Gain, Low Capacitance | N-Channel Enhancement Mode | ||
| 2N4352 | TO-72 | -25 | ± 10 | -10 | 600 | High Gain, Low Capacitance | P-Channel Enhancement Mode | ||
| 3N161 | TO-72 | -25 | -10 | -4.5 | -8 | Diode Protected | P-Channel Enhancement Mode | ||
| 3N163 | TO-72 | -40 | -10 | 0.2 | -2.5 | -6.5 | 250 | Very High Input Impedance | P-Channel Enhancement Mode |
| 3N164 | TO-72 | -30 | -10 | 0.4 | -2.5 | -6.5 | 300 | Very High Input Impedance | P-Channel Enhancement Mode |
| 3N170 | TO-72 | 25 | ± 10 | 10 | 200 | Low Switching Voltages | N-Channel Enhancement Mode | ||
| 3N171 | TO-72 | 25 | ± 10 | 10 | 200 | Low Switching Voltages | N-Channel Enhancement Mode | ||
| 3N172 | TO-72 | -40 | -200 | -0.4 | -3 | -6.5 | 250 | High Imput Impedance, Diode Protected | P-Channel Enhancement Mode |
| 3N173 | TO-72 | -30 | -500 | -10 | -2.5 | -6.5 | 350 | High Imput Impedance, Diode Protected | P-Channel Enhancement Mode |
| Part | Package | Breakdown V Min
| IDSS (nA) Max
| VGS (V) Min
| VGS (V) Max
| RDS (on) (Ohm) Max
| Comments
| Channel
|
| 3N165 | TO-99 | 40 | -0.2 | 300 | Very High Impedance | P-Channel Enhancement Mode | ||
| 3N166 | TO-99 | 30 | -0.2 | 300 | Very High Impedance | P-Channel Enhancement Mode | ||
| 3N190 | TO-99 | -40 | -0.2 | -3 | -6.5 | 300 | Very High Input Impedance | Dual P-Channel Enhancement Mode |
| 3N191 | TO-99 | -40 | -0.2 | -3 | -6.5 | 300 | Very High Input Impedance | Dual P-Channel Enhancement Mode |
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